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SUBMINIATURE PHOTOINTERRUPTER
Description
The MIR-3305 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.
D C
MIR-3305
Package Dimensions
Unit: mm
A Anode Mark
B
Features
Compact and thin MIR-3305 : Compact DIP, long lead type Optimum detecting distance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type
NOTE: (1).Tolerance:0.2mm (2). ( ) Reference dimensions
Emitter D
TOP VIEW
C Col lector B Cathode
Anode A
Absolute Maximum Ratings
@ TA=25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO Pc PTOT Topr Tstg
o
Minimum Rating Maximum Rating 50 5 75 30 5 75 100 -25 C to + 85 C -40 oC to + 100oC
o
Unit mA V mW V V mW mW
o Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260 C
Unity Opto Technology Co., Ltd.
12/10/2002
MIR-3305
Optical-Electrical Characteristics
@ TA=25oC Parameter Input Output Forward Voltage Reverse Current Collector Dark Current symbol VF IR Iceo B
*1
Min. 38 56 80 112 -
Typ. 20 20 -
Max. 1.3 10 0.2 75 108 151 216 100 100 0.1
Unit. V A A
Test Conditions IF =20mA VR =5V Vce =10V
Collector Current
Ic
C D E tr tf
A
IF=4mA,Vce=5V
Transfer Characteristic s Response Time (RISE) Response Time (FALL)
*2
S S A
Ic=100A, Vce =2V RL =1k Vce =5V
Leak Current
ILEAK
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING . *2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive Surface 1 mm-thick glass Device
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA)
60 50 40 30 20 10 0 -25 0 25 50 75
o
Power Dissipation (mW)
120 100 80 60 40 20 0 -25
PTOT Pad , PC
100
0
25
50
75
o
100
Ambient Temperature TA ( C) Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) Collector Current Ic (A)
50 40 30 20 10 0 0 0.5 1 1.5 600 500 400 300 200 100 0 0
Ambient Temperature TA ( C ) Fig.2 Power Dissipation vs. Ambient Temperature
Vce=5V Ta=25oC
5
10
15
20
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage
Forward Current IF (mA) Fig.4 Collector Current vs. Forward Current
Unity Opto Technology Co., Ltd.
12/10/2002
MIR-3305
Typical Optical-Electrical Characteristic Curves
Collector Current Ic (A)
350 300 250 200 150 100 50 0 0 2 4 6 8 10 12
1mA
Relative Collector Current (%)
Ta=25oC IF=10mA 4mA
120 100 80 60 40 20 0 -25 0 25 50 75 100
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Collector Dark Current ICEO
10-6 10
-7
Ambient Temperature TA (oC) Fig.6 Relative Collector Current VS.
100
Response Time (s)
VCE=10V
tr tr td
10 1 0.1 0.01
10-8 10-9 10-10 0 25 50 75 100
ts
VCE=2V IC=100A T a=25oC
0.1
1
10
Ambient Temperature TA (oC) Fig.7 Collector Dark Current vs. Ambient Temperature Relative Collector Current (%) Relative Sensitivity (%)
100 80 60 40 20 0 700 800 900 1000 1100 1200 Ta=25oC 120 100 80 60 40 20 0 0 1
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
IF=4mA VCE=5V T A=25oC
2
3
4
5
6
7
8
9 10
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Distance (mm) Fig.10 Relative Collector Current vs. Distance between MIR-3301 and Card
Test Circuit for Response Time
Vcc Input RD RL Input
Output Output 10% td tr 90% tf
ts
Unity Opto Technology Co., Ltd.
12/10/2002

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